Mfg Part Number: 8949340-05 | Alternate P/N: 894934005 | NSN : 5962-01-349-5555 |
NIIN : 013495555 | CAGE Code : 94117 | Manufacturer: Bae Systems Information And Electronic Systems Integration Inc |
Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
ASAP Integrated Distribution is a purchasing platform owned and operated by ASAP Semiconductor, and we are your sourcing solution for 8949340-05 Microcircuit Memory NSN parts with NSN 5962-01-349-5555. This 8949340-05 NSN product is manufactured by Bae Systems Information And Electronic Systems Integration Inc. If you are interested in this item and would like to kickstart the procurement process with a quote for your comparisons, complete and submit the form provided below at your earliest convenience. Once we receive a form, a dedicated account manager will rapidly formulate a customized solution and personally reach out to you within 15 minutes or less.
To ensure that customers only purchase the exact parts that they require, we list items with all applicable information. For example, NSN 5962-01-349-5555 was specifically produced under the CAGE Code 94117, denoting the specific Bae Systems Information And Electronic Systems Integration Inc facility that its production traces back to. Additionally, we conduct extensive document verification, ensuring that our offerings are traceable, up to required standards, and more. With our steadfast dedication to quality control and compliance, we operate with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation. Kickstart the procurement process for the NSN parts you need with an RFQ, and we will do the rest for you!
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-349-5555 Item Description: Microcircuit Memory | 5962 | 013495555 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
8949340-05 | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CZER | MEMORY DEVICE TYPEPROM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY8 PRINTED CIRCUIT |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 125 0 DEG CELSIUS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC10 00 MILLIAMPERES MAXIMUM SUPPLY |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC150 00 NANOSECONDS MAXIMUM DELAY |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
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